ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 general description the MSU4N60 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 251 package is universally preferred for all commercial - industrial applications features ?low on resistance ?simple drive requirement ?low gate charge ?fast switching characteristic ?rohs compliant / halogen free package available to - 251 1.gate 2. drain 3. source symbol parameter value units v dss drain to source voltage 60 0 v v gs gate to source voltage ?0 v continuous drain current(@t c = 25 c) 4.5 a i d continuous drain current(@t c = 100 c) 2.6 a i dm drain current pulsed 18 a e as single pulsed avalanche energy 33 mj i ar avalanche current 4 .0 a e ar repetitive avalanche energy 10 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t l maximum temperature for soldering @ lead at 0.125 in(0.318mm) from case for 10 seconds 300 ? t pkg maximum temperature for soldering @ p ackage body for 10 seconds 260 ? total power dissipation(@t c = 25 c) 31 w p d derating factor above 25 c 0. 25 w/ c t stg operating junction temperature - 55 ~ 150 ? t j storage temperature 150 ? note: 1.repetitive rating; pulse width limited by ma ximum junction temperature. 2. ias=4a, vdd=50v, l=8mh, vg=10v, starting tj=+25 c. 3. isd 4a, di/dt 100a/ s, vdd bvdss, starting tj=+25?.
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 thermal characteristics value symbol parameter min. typ. max. units r jc thermal resistance, junction - to - case - - 2.8 ?/w r ja thermal resistance, junction - to - ambient - - 50.0 ?/w electr ical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units static characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ua 60 0 - - v bv dss / t j breakdown voltage temperature coeffi cient i d = 250 ua, referenced to 25 c - 0.6 0 - v/ c v gs(th) gate threshold voltage v ds = v gs , i d = 250 ua 2.0 - 4.0 v v ds = 60 0 v, v gs = 0 v - - 1 ua i dss drain - source leakage current v ds = 48 0 v, t c = 125 c - - 10 ua i gss gate - source leakage, forward v gs = 30 - - 100 na r ds(on) static drain - source on - state resistance v gs = 10 v, i d = 2 . 2 5 a - 2.0 25 dynamic characteristics q g total gate charge - 16 - q gs gate - source charge - 2.5 - q gd gate - drain charge (miller charge) id=4.5 a, vdd=480 v, vgs=10v - 6.5 - nc t d(on) turn - on delay time - 1 0 30 t r rise ti me - 40 80 t d(off) turn - off delay time - 40 100 t f fall time id= 4.5 a, vdd=300 v, vgs=10v rg=25 - 50 90 ns c iss input capacitance - 560 - c oss output capacitance - 55 - c rss reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz - 7 - pf
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 symbol parameter test conditions min typ max units source - drain diode v sd is=4 .0a, vgs=0v - - 1.4 v i s - - 4 .0 a i sm vd=vg=0, - - 16 a trr - 270 - ns qrr vgs=0, if=4 a, di/dt=100a/us - 18 - uc *pulse test : pulse width 300?, duty cycle 2%
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 characteristic curves figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forwa rd voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics characteristic curves
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 figure 7. breakdown voltage variation vs. temperature figure 8. on - resistance variation v s. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 fig 15. peak diode recovery dv/dt test circuit & waveforms
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 package dimensions dimensions in millimeters dimensions in inches symbol min max min max a 2.15 2.45 0.85 0.96 a1 1.00 1.40 0.39 0.55 b 1.25 1.75 0.49 0.69 b 0.45 0.75 0.18 0.3 b1 0.65 0.95 0.26 0. 37 c 0.38 0.64 0.15 0.25 c1 0.38 0.64 0.15 0.25 d 6.30 6.70 2.48 2.64 d1 5.10 5.50 2.01 2.17 e 5.30 5.70 2.09 2.24 e 2.3 (typ.) 0.91 (typ.) e1 4.4 4.8 1.73 1.89 l 7.4 8.0 2.91 3.15
ms u 4n60 60 0v n - channel mosfet bruckewell technology corporation rev. a - 2012 legal disclaimer notice discla imer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regardin g the suitability of products for certain types of applications are based on bruckewell? knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitabil ity of products for a particular application. it is the customer? responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datas heets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewell? terms and conditions of purchase, including but not limited to the warranty expressed therein.
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